Samsung this time will increase their memory variants, namely the existence of a new memory with the size of 30 nanometers with a 3-bit technology in data storage methods, flash memory is DDR soon will be present and can be felt by us. Samsung has done production for the 3-bit Multi-Level Cell NAND memory is combined with 30nm technology, the results we will obtain the data transfer process to 3x faster it, smaller chips, and also data storage greater than chip technology NAND before. Thus this NAND chip technology will move into the Multi-Level Cell NAND chip that offers 133Mbps speed R / W which previous technology offers speeds up to 40Mbps. By using 3-bit chip is currently only be used in GB microSD card with 8GB capacity only, will be developed further to some other types of memory variants.
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